4.6 Article

Giant anisotropic magnetoresistance and planar Hall effect in Sr0.06Bi2Se3

Journal

APPLIED PHYSICS LETTERS
Volume 113, Issue 22, Pages -

Publisher

AMER INST PHYSICS
DOI: 10.1063/1.5063689

Keywords

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Funding

  1. National Key R&D Program of China [2017YFA0403600, 2016YFA0300404]
  2. National Natural Science Foundation of China [U1532267, U1832209, 11674327]
  3. Project of the Anhui High Education Institutions [KJ2017A532, 2018xk03, 2017jxtd035]

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We report the observation of giant negative anisotropic magnetoresistance and planar Hall effect in superconducting topological insulator Sr0.06Bi2Se3. It is found that giant anisotropic magnetoresistance and planar Hall effect with non-zero transverse voltage are developed by tilting the in-plane magnetic field away from the direction of the electrical current. Quantitative analyses of the measured data suggest that the observed anisotropic magnetoresistance and planar Hall effect originate from the chiral anomaly behavior of the material. The large anisotropic magnetoresistance and planar Hall effect demonstrate that this material has potential to be utilized in magnetoresistive devices with low power consumption. Published by AIP Publishing.

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