Journal
APPLIED PHYSICS LETTERS
Volume 113, Issue 21, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.5054054
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Funding
- Strategic Innovation Program for Energy Conservation Technologies of the New Energy and Industrial Technology Development Organization (NEDO)
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Corundum-structured iridium oxide (alpha-Ir2O3), showing p-type conductivity, is a strong candidate to form high-quality pn heterojunctions with alpha-Ga2O3. We fabricated alpha-Ir2O3/alpha-Ga2O3 pn heterojunction diodes and they showed well-defined rectifying current-voltage (I-V) characteristics with the turn-on voltage of about 2.0V. The band alignment at the alpha-Ir2O3/alpha-Ga2O3 interface was investigated by X-ray photoemission spectroscopy, revealing a staggered-gap (type-II) with the valence-and conduction-band offsets of 3.34 eV and 1.04 eV, respectively. The total barrier height for electrons was about 2.4 eV, which reasonably agreed with the turn-on voltage in the I-V characteristics. This means that electrons are mainly attributed to electrical conduction around the turn-on voltage. Published by AIP Publishing.
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