Journal
APPLIED PHYSICS EXPRESS
Volume 12, Issue 2, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.7567/1882-0786/aafca8
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Funding
- MEXT Program for research and development of next-generation semiconductor to realize energy-saving society
- JSPS KAKENHI [16H06416, 17H01055]
- MEXT Private University Research Branding Project
- Grants-in-Aid for Scientific Research [16H06416] Funding Source: KAKEN
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We have systematically investigated acceptor (Mg) and donor (Si) profiles at GaN tunnel junction interfaces with the aim of a low resistivity under reverse bias. We found that an overlap between Mg and Si at the tunnel junction interface was effective in helping to obtain a lower resistivity of the GaN tunnel junctions, which contradicts the typical picture of conventional semiconductor-based tunnel junctions. We demonstrated a LED with the GaN tunnel junction prepared in a single growth run by metalorganic vapor phase epitaxy, showing a differential resistivity of 2.4 x 10(-4) Omega cm(2 )at 5 kA cm(-2). (C) 2019 The Japan Society of Applied Physics
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