Journal
ADVANCED MATERIALS
Volume 30, Issue 49, Pages -Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201803563
Keywords
heterostructures; infrared light stimuli; MoS2; photonic memories; upconversion nanoparticles
Categories
Funding
- Natural Science Foundation of China [61601305, 61604097]
- Science and Technology Innovation Commission of Shenzhen [JCYJ20170818143618288, JCYJ20170302145229928, ZDSYS201707271554071, JCYJ20170302151653768]
- Shenzhen Peacock Technological Innovation Project [KQJSCX20170727100433270, KQJSCX20170327150812967]
- Guangdong Provincial Department of Science and Technology [2018B030306028, 2017TQ04X082, 2017A010103026]
- Department of Education of Guangdong Province [2015KQNCX141, 2016KTSCX120]
- China Postdoctoral Science Foundation [2018M630984]
- Natural Science Foundation of SZU
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Photonic memories as an emerging optoelectronic technology have attracted tremendous attention in the past few years due to their great potential to overcome the von Neumann bottleneck and to improve the performance of serial computers. Nowadays, the decryption technology for visible light is mature in photonic memories. Nevertheless, near-infrared (NIR) photonic memristors are less progressed. Herein, an NIR photonic memristor based on MoS2-NaYF4:Yb3+, Er3+ upconversion nanoparticles (UCNPs) nanocomposites is designed. Under excitation by 980 nm NIR light, the UCNPs show emissions well overlapping with the absorption band of the MoS2 nanosheets. The heterostructure between the MoS2 and the UCNPs acting as excitons generation/separation centers remarkably improves the NIR-light-controlled memristor performance. Furthermore, in situ conductive atomic force microscopy is employed to elucidate the photo-modulated memristor mechanism. This work provides novel opportunities for NIR photonic memory that holds promise in future multifunctional robotics and electronic eyes.
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