Journal
ADVANCED FUNCTIONAL MATERIALS
Volume 28, Issue 47, Pages -Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adfm.201804187
Keywords
charge carrier injection; light-emitting diodes; photoluminescence quantum yield; quasi-2D perovskite; solvent post-treatment
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Funding
- National Natural Science Foundation of China [51573042, 51873007, 21835006]
- Key Laboratory of Optoelectronic Chemical Materials and Devices, Ministry of Education, Jianghan University [JDGD-201801]
- Fundamental Research Funds for the Central Universities in China [2016YQ06, 2018MS032, 2018ZD07]
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Quasi-two-dimensional (quasi-2D) perovskites are attracting much attention due to their impressive luminescence properties. However, the introduction of insulating bulky cations reduces the charge transport property of mixed-dimensional perovskites and leads to lowered brightness and increased turn-on voltage. The trade-off between high photoluminescence quantum yield (PLQY) and electrical conductivity should be well manipulated to obtain high-performance perovskite light-emitting diodes (PeLEDs). Herein, quasi-2D perovskite BA(2)(CsPbBr3)(n-1)PbBr4-PEO with high PLQY and excellent carrier injection efficiency is demonstrated by incorporating bulky n-butylammonium bromide (BABr), CsPbBr3, and polyethylene oxide (PEO). BA can intercalate into the three-dimensional perovskite framework to form a layered (quasi-2D) perovskite structure. The ion conductive polymer PEO is used to protect quasi-2D perovskite crystals. Additional BABr is removed by using anhydrous isopropyl alcohol as a washing agent due to its selective dissolubility. By carefully modulating the optical and electrical properties of quasi-2D perovskite films, the maximum luminance of PeLEDs is dramatically enhanced from 191 to 33533 cd m(-2), which is the brightest green quasi-2D PeLED reported thus far, leading to an increase in external quantum efficiency from 1.81% to 8.42%. This work provides a promising route to control the optical and electrical properties of quasi-2D perovskite films for high-performance optoelectronic devices.
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