4.8 Article

Direct and Indirect Exciton Dynamics in Few-Layered ReS2 Revealed by Photoluminescence and Pump-Probe Spectroscopy

Journal

ADVANCED FUNCTIONAL MATERIALS
Volume 29, Issue 6, Pages -

Publisher

WILEY-V C H VERLAG GMBH
DOI: 10.1002/adfm.201806169

Keywords

carrier dynamics; intraband and interband relaxation; photoluminescence; pump-probe spectroscopy; transition metal dichalcogenides

Funding

  1. JSPS KAKENHI [JP17K19055, JP16H00911, JP15K13337, JP15H05408, JP15K13500, JP16H00910, JP16H06331, JP17H06786]
  2. JST CREST [JPMJCR16F3, JPMJCR18I5]
  3. ATI Research Grants 2017 the Research Foundation for Opto-Science and Technology
  4. Asahi glass foundation

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Atomically thin-layered ReS2 with a distorted 1T structure has attracted attention because of its intriguing optical and electronic properties. Here, the direct and indirect exciton dynamics of a three-layered ReS2 is investigated by polarization-resolved transient photoluminescence (PL) and ultrafast pump-probe spectroscopy. The various time scales of the decay signals of the time-resolved PL (<10 ps), with monitoring of the populations of electron-hole pairs (exciton), and the transient differential reflectance (approximate to 1 and 100 ps), with monitoring of the populations of electrons and/or holes in the excited states, are observed. These results reveal the characteristic exciton dynamics: rapid relaxation of direct excitons (electron-hole pairs) and slow relaxation of the momentum-mismatched indirect excitons accompanied by a one-phonon emission process. These findings provide important information regarding the indirect bandgap nature of few-layered ReS2 and its characteristic exciton dynamics, boosting the understanding of the novel electronic and optical properties of atomically thin-layered ReS2.

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