Journal
ADVANCED FUNCTIONAL MATERIALS
Volume 29, Issue 11, Pages -Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adfm.201806250
Keywords
B-doping; detectivity; photodetectors; SiC nanobelt; stability
Categories
Funding
- National Natural Science Foundation for Excellent Young Scholars of China [51522402]
- National Natural Science Foundation of China (NSFC) [51572133, 51672137, 51702174, 51702175]
- National Postdoctoral Program for Innovative Talents [BX20180034]
- Zhejiang Provincial Nature Science Foundation [LQ17E020002]
- Natural Science Foundation of Ningbo Municipal Government [2017A610002]
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In the present work, high-performance photodetectors (PDs) based on a single B-doped 3C-SiC nanobelt, which are synthesized via catalyst-free pyrolysis of polymeric precursors of polysilazane, are reported. The as-built PDs have a high responsivity and external quantum efficiency of 6.37 x 10(5) A.W-1 and 2.0 x 10(8)% under 405 nm light with a power density of 0.14 mW.cm(-2) at 5 V, respectively. The detectivity of the PDs is measured to be of 6.86 x 10(14) Jones. Moreover, the B-doped 3C-SiC nanobelt PDs exhibit a long-term stability against 300 degrees C up to 180 days, suggesting their promising applications to be served under harsh conditions.
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