Journal
ADVANCED FUNCTIONAL MATERIALS
Volume 29, Issue 7, Pages -Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adfm.201805533
Keywords
atmospheric pressure chemical vapor deposition; barrier height; conduction mechanism; MIM diode; quantum tunneling; spatial atomic layer deposition
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Funding
- Prince Sattam bin Abdul Aziz University, Alkharj, Saudi Arabia
- Agence National de la Recherche [ANR-16-CE05-0021]
- ARC Energy Auvergne-Rhone Alpes
- Marie Curie Actions (FP7/2007-2013), Carnot Energies du Futur (ALDASH project) [631111]
- Carnot Energies du Futur (ALDASH project)
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A quantum-tunneling metal-insulator-metal (MIM) diode is fabricated by atmospheric pressure chemical vapor deposition (AP-CVD) for the first time. This scalable method is used to produce MIM diodes with high-quality, pinhole-free Al2O3 films more rapidly than by conventional vacuum-based approaches. This work demonstrates that clean room fabrication is not a prerequisite for quantum-enabled devices. In fact, the MIM diodes fabricated by AP-CVD show a lower effective barrier height (2.20 eV) at the electrode-insulator interface than those fabricated by conventional plasma-enhanced atomic layer deposition (2.80 eV), resulting in a lower turn on voltage of 1.4 V, lower zero-bias resistance, and better asymmetry of 107.
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