Journal
ADVANCED FUNCTIONAL MATERIALS
Volume 29, Issue 4, Pages -Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adfm.201805614
Keywords
controlled doping; field effect transistors; PtSe2; transition metal dichalcogenides
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Funding
- National Key Research and Development Program [2016YFA0203900]
- Shanghai Municipal Science and Technology Commission [18JC1410300]
- Natural Science Foundation of China [61874154]
- Key Research Project of Frontier Sciences of Chinese Academy of Sciences [QYZDB-SSW-JSC016]
- NSF-ECCS [1610447]
- Directorate For Engineering [1610447] Funding Source: National Science Foundation
- Div Of Electrical, Commun & Cyber Sys [1610447] Funding Source: National Science Foundation
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Semiconductive transition metal dichalcogenides (TMDs) have been considered as next generation semiconductors, but to date most device investigations are still based on microscale exfoliation with a low yield. Wafer scale growth of TMDs has been reported but effective doping approaches remain challenging due to their atomically thick nature. This work reports the synthesis of wafer-scale continuous few-layer PtSe2 films with effective doping in a controllable manner. Chemical component analyses confirm that both n-doping and p-doping can be effectively modulated through a controlled selenization process. The electrical properties of PtSe2 films have been systematically studied by fabricating top-gated field effect transistors (FETs). The device current on/off ratio is optimized in two-layer PtSe2 FETs, and four-terminal configuration displays a reasonably high effective field effect mobility (14 and 15 cm(2) V-1 s(-1) for p-type and n-type FETs, respectively) with a nearly symmetric p-type and n-type performance. Temperature dependent measurement reveals that the variable range hopping is dominant at low temperatures. To further establish feasible application based on controllable doping of PtSe2, a logic inverter and vertically stacked p-n junction arrays are demonstrated. These results validate that PtSe2 is a promising candidate among the family of TMDs for future functional electronic applications.
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