Journal
ACS NANO
Volume 13, Issue 1, Pages 803-811Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsnano.8b08260
Keywords
titanium trisulfide; transition-metal trichalcogenides; metal-insulator transition; charge-density wave; one-dimensional nanostructures
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Funding
- National Science Foundation [NSF-ECCS 1740136, 1508541]
- NCORE
- Centre National de la Recherche Scientifique (CNRS), France
- Commissariat a l'Energie Atomique et aux Energies Alternatives (CEA), France
- French National Research Agency (ANR) as part of the Investissements d'Avenir [ANR-17-CE09-0016-05]
- U.S. Department of Energy, Office of Basic Energy Sciences, Division of Materials Sciences and Engineering [DE-FG02-04ER46180]
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We explore the electrical characteristics of TiS3 nanowire field-effect transistor (FETs), over the wide temperature range from 3 to 350 K. These nanomaterials have a quasi-one-dimensional (1D) crystal structure and exhibit a gate-controlled metal-insulator transition (MIT) in their transfer curves. Their room-temperature mobility is similar to 20-30 cm(2)/(V s), 2 orders of magnitude smaller than predicted previously, a result that we explain quantitatively in terms of the influence of polar-optical phonon scattering in these materials. In the insulating state (
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