Journal
ACS NANO
Volume 13, Issue 2, Pages 2599-2605Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsnano.8b09663
Keywords
transition metal dichalcogenides; spin-orbit torque; spin-torque; crystal symmetry; van der Waals materials; 2D materials
Categories
Funding
- US Department of Energy [DE-SC0017671]
- National Science Foundation (NSF) [DMR-1708499]
- NSF through the Platform for the Accelerated Realization, Analysis, and Discovery of Interface Materials (PARADIM) [DMR-1539918]
- Cornell University Center for Advanced Computing at Cornell University
- NSF through PARADIM as part of the Materials for Innovation Platform Program
- Kavli Institute at Cornell for Nanoscale Science
- Netherlands Organization for Scientific Research [NWO Rubicon 680-50-1311]
- NSF through the Cornell Center for Materials Research (CCMR) [DMR-1719875]
- NSF [ECCS-1542081]
- Cornell University
- Weill Institute
- Kavli Institute at Cornell
- [NSF-MRI-1429155]
- U.S. Department of Energy (DOE) [DE-SC0017671] Funding Source: U.S. Department of Energy (DOE)
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We report measurements of current-induced torques in heterostructures of Permalloy (Py) with TaTe2, a transition -metal dichalcogenide (TMD) material possessing low crystal symmetry, and observe a torque component with Dresselhaus symmetry. We suggest that the dominant mechanism for this Dresselhaus component is not a spin orbit torque but rather the Oersted field arising from a component of current that flows perpendicular to the applied voltage due to resistance anisotropy within the TaTe2. This type of transverse current is not present in wires made from a single uniform layer of a material with resistance anisotropy but will result whenever a material with resistance anisotropy is integrated into a heterostructure with materials having different resistivities, thereby producing a spatially nonuniform pattern of current flow. This effect will therefore influence measurements in a wide variety of heterostructures incorporating 2D TMD materials and other materials with low crystal symmetries.
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