4.8 Article

Current-Induced Torques with Dresselhaus Symmetry Due to Resistance Anisotropy in 2D Materials

Journal

ACS NANO
Volume 13, Issue 2, Pages 2599-2605

Publisher

AMER CHEMICAL SOC
DOI: 10.1021/acsnano.8b09663

Keywords

transition metal dichalcogenides; spin-orbit torque; spin-torque; crystal symmetry; van der Waals materials; 2D materials

Funding

  1. US Department of Energy [DE-SC0017671]
  2. National Science Foundation (NSF) [DMR-1708499]
  3. NSF through the Platform for the Accelerated Realization, Analysis, and Discovery of Interface Materials (PARADIM) [DMR-1539918]
  4. Cornell University Center for Advanced Computing at Cornell University
  5. NSF through PARADIM as part of the Materials for Innovation Platform Program
  6. Kavli Institute at Cornell for Nanoscale Science
  7. Netherlands Organization for Scientific Research [NWO Rubicon 680-50-1311]
  8. NSF through the Cornell Center for Materials Research (CCMR) [DMR-1719875]
  9. NSF [ECCS-1542081]
  10. Cornell University
  11. Weill Institute
  12. Kavli Institute at Cornell
  13. [NSF-MRI-1429155]
  14. U.S. Department of Energy (DOE) [DE-SC0017671] Funding Source: U.S. Department of Energy (DOE)

Ask authors/readers for more resources

We report measurements of current-induced torques in heterostructures of Permalloy (Py) with TaTe2, a transition -metal dichalcogenide (TMD) material possessing low crystal symmetry, and observe a torque component with Dresselhaus symmetry. We suggest that the dominant mechanism for this Dresselhaus component is not a spin orbit torque but rather the Oersted field arising from a component of current that flows perpendicular to the applied voltage due to resistance anisotropy within the TaTe2. This type of transverse current is not present in wires made from a single uniform layer of a material with resistance anisotropy but will result whenever a material with resistance anisotropy is integrated into a heterostructure with materials having different resistivities, thereby producing a spatially nonuniform pattern of current flow. This effect will therefore influence measurements in a wide variety of heterostructures incorporating 2D TMD materials and other materials with low crystal symmetries.

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