Journal
ACS APPLIED MATERIALS & INTERFACES
Volume 10, Issue 47, Pages 40614-40622Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsami.8b13620
Keywords
van der Waals heterostructures; wafer-scale fabrication; self-driving operation; photoresponsivity; broad band photodetection; quantum efficiency
Funding
- National Natural Science Foundation of China [61604102, 51290273, 11404372]
- Natural Science Foundation of Jiangsu Province [BK20150053]
- National Key Research and Development Program of China [2016YFA0201902]
- Natural Science Major Foundation of Anhui Provincial Higher Education Institutions of China [KJ2017A393]
Ask authors/readers for more resources
The fabrication of van der Waals heterostructures mainly extends to two-dimensional (2D) materials that are exfoliated from their bulk counterparts, which is greatly limited by high-volume manufacturing. Here, we demonstrate multilayered PtS2/PtSe2 heterojunctions covering a large area on the SiO2/Si substrate with a maximum size of 2 '' in diameter, offering throughputs that can meet the practical application demand. Theoretical simulation was carried out to understand the electronic properties of the PtS2/PtSe2 heterojunctions. Zero-bias photoresponse in the heterojunctions is observed under laser illumination of different wavelengths (405-2200 nm). The PtS2/PtSe2 heterojunctions exhibit broad band photoresponse and high quantum efficiency at infrared wavelengths with lower bounds for the external quantum efficiencies being 1.2% at 1064 nm, 0.2% at 1550 nm, and 0.05% at 2200 nm, and also relatively fast response time at the dozens of millisecond level. The large area, broad band 2D heterojunction photodetector demonstrated in this work further corroborates the great potential of 2D materials in the future low-energy optoelectronics.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available