4.8 Article

Graphene Shield by SiBCN Ceramic: A Promising High-Temperature Electromagnetic Wave-Absorbing Material with Oxidation Resistance

Journal

ACS APPLIED MATERIALS & INTERFACES
Volume 10, Issue 45, Pages 39307-39318

Publisher

AMER CHEMICAL SOC
DOI: 10.1021/acsami.8b15365

Keywords

high-temperature electromagnetic absorption; graphene; polymer-derived ceramic; high-temperature resistance; anti-oxidation

Funding

  1. National Natural Science Foundation of China [21875190]
  2. Natural Science Basic Research Plan in Shaanxi Province of China [2018JC-008]
  3. Shaanxi Province Key Research and Development Plan for Industry Innovation Chain (Cluster) [2018ZDCXL-GY-09-07]
  4. Analytical and Testing Center of NPU

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As cutting-edge emerging electromagnetic (EM) wave-absorbing materials, the Achilles' heel of graphenes is vulnerable to oxidation under high temperature and oxygen atmosphere, particularly at temperatures more than 600 degrees C. Herein, a graphene@Fe3O4/siliconboron carbonitride (SiBCN) nanocomplex with a hierarchical A/B/C structure, in which SiBCN serves as a shield to protect graphene@Fe3O4 from undergoing high-temperature oxidation, was designed and tuned by polymer-derived ceramic route. The nanocomplexes are stable even at 1100-1400 degrees C in either argon or air atmosphere. Their minimum reflection coefficient (RCmin) and effective absorption bandwidth (EAB) are -43.78 dB and 3.4 GHz at ambient temperature, respectively. After oxidation at 600 degrees C, they exhibit much better EM wave absorption, where the RCmin decreases to 66.21 dB and EAB increases to 3.69 GHz in X-band. At a high temperature of 600 degrees C, they also possess excellent and promising EW wave absorption, for which EAB is 3.93 GHz, covering 93.6% range of X-band. In comparison to previous works on graphenes, either the EAB or the RCmin of these nanocomplexes is excellent at high-temperature oxidation. This novel nanomaterial technology may shed light on the downstream applications of graphenes in EM-wave-absorbing devices and smart structures worked in harsh environments.

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