Journal
ACS APPLIED MATERIALS & INTERFACES
Volume 11, Issue 3, Pages 3142-3149Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsami.8b11681
Keywords
ferroelectricity; HfO2; FeRAM; defects; thin films; domain switching
Funding
- MOTIE (Ministry of Trade, Industry Energy) [10080657]
- KRSC (Korea Semiconductor Research Consortium)
- National Research Foundation of Korea (NRF) - Korean government (MSIP) [NRF-2017R1C1B2010258]
- SK Hynix Inc.
- Creative Materials Discovery Program [NRF-2016M3D1A1900035]
- National Research Foundation of Korea (NRF) - Korea Government (MSIT) [NRF-2017R1A5A1015356]
- [IBS-R006-D1]
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The ferroelectricity in ultrathin HfO2 offers a viable alternative to ferroelectric memory. A reliable switching behavior is required for commercial applications; however, many intriguing features of this material have not been resolved. Herein, we report an increase in the remnant polarization after electric field cycling, known as the wake-up effect, in terms of the change in the polarization-switching dynamics of a Si-doped HfO2 thin film. Compared with a pristine specimen, the Si-doped HfO2 thin film exhibited a partial increase in polarization after a finite number of ferroelectric switching behaviors. The polarization-switching behavior was analyzed using the nucleation-limited switching model characterized by a Lorentzian distribution of logarithmic domain-switching times. The polarization switching was simulated using the Monte Carlo method with respect to the effect of defects. Comparing the experimental results with the simulations revealed that the wake-up effect in the HfO2 thin film is accompanied by the suppression of disorder.
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