Journal
ACS APPLIED MATERIALS & INTERFACES
Volume 10, Issue 47, Pages 40764-40772Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsami.8b13859
Keywords
Ga-doped ZnO nanowire; polarity; vapor-liquid-solid growth; catalyst; triple-phase line
Funding
- Ministry of Science and Technology, Taiwan, The Republic of China [MOST 106-2221-E-002-163-MY3, MOST 10S-2221-E-002-159-MY3, MOST 106-2221-E-002-162]
- US Air Force Office of Scientific Research [AOARD-17IOA087]
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Surface behavior modification by forming surface-transparent conductive nanowires (NWs) is an important technique for many applications, particularly when the polarities of the NWs can be controlled. The polarities of Ga-doped ZnO (GaZnO) NWs grown on templates of different polarities under different growth conditions are studied for exploring a polarity control growth technique. The NWs are formed on Ga- and N-face GaN through the vapor-liquid-solid (VLS) process using Ag nanoparticles as growth catalyst. The NWs grown on templates of different polarities under the Zn- (O-) rich conditions are always Zn (O) polar. During the early stage of NW growth, because the lattice sizes among different nucleation islands formed at the triple-phase line are quite different, high density planar defects are produced when lateral growths from multiple nucleation islands form a GaZnO double bilayer. In this situation, frequent domain inversions occur, and GaZnO polarity is unstable. Under the Zn- (O-) rich conditions, because the lateral growth rate of GaZnO in the Zn- (O-) polar structure is higher due to more available dangling bonds, the growth of the Zn- (O-) polar structure dominates NW formation such that the NW eventually becomes Zn (O) polar irrespective of the polarity of the growth template. Therefore, the polarity of a doped-ZnO NW can be controlled simply by the relative supply rates of Zn and O during VLS growth.
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