Journal
ACS APPLIED MATERIALS & INTERFACES
Volume 10, Issue 43, Pages 37316-37325Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsami.8b11057
Keywords
metal-halide perovskites; methylammonium lead iodide; light-emitting field-effect transistors; AC-driven light-emitting devices; space-charge field-assisted injection
Funding
- Singapore Ministry of Education [MOE2016-T1-1-164, MOE2011-T3-1-005]
- Singapore National Research Foundation [NRF-CRP14-2014-03]
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Perovskite light-emitting field-effect transistors (PeLEFETs) provide a versatile device architecture to control transport and electroluminescence properties of hybrid perovskites, enabling injection of high charge carrier density and spatial control of the radiative recombination zone. Ionic screening and organic cation polarization effects typical of metal-halide perovskites, however, critically affect PeLEFET efficiency and reliability. In this work, we demonstrate a new device operation mode based on high-frequency modulation of the applied voltages, which allows significant reduction of ionic drift/screening in methylammonium lead iodide light emitting transistors. In optimized top contact PeLEFETs, AC operation results in brighter and more uniform electroluminescence compared to DC-driven devices, whereas high-frequency modulation enables electroluminescence emission up to room temperature.
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