Journal
ACS APPLIED MATERIALS & INTERFACES
Volume 10, Issue 50, Pages 43299-43304Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsami.8b15317
Keywords
Ga0.84In1.86Se; alloy engineering; photodetectors; two-dimensional materials; III-VI group semiconductors
Funding
- National Natural Science Foundation of China (NSFC) [51802038, 61505033]
- China Postdoctoral Science Foundation [2018M630329]
- Fundamental Research Funds for the Central Universities [2572018BC14]
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The electronic and optoelectronic properties of 2D alloy Ga0.84In0.16Se were investigated for the first time. 2D Ga0.84In0.16Se FETs show p-type conduction behaviors. 2D Ga0.84In0.16Se photodetectors show high photoresponse in the visible light range of 500 to 700 nm. The responsivity value is 258 A/W for alloy photodetector (500 nm illumination), and it is 92 times and 20 times higher than those of 2D GaSe and InSe photodetectors, respectively. Moreover, the alloy photodetector exhibits good photoresponse stability and rapid photoresponse time. Our results demonstrate that 2D alloy Ga0.84In0.16Se has great potential for application in photodetection and sensor devices.
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