Journal
ACS APPLIED MATERIALS & INTERFACES
Volume 10, Issue 50, Pages 43887-43895Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsami.8b15406
Keywords
CdSxSe1-x nanosheets; 2D nonlayered materials; PbS quantum dots; hybrid nanostructure; photodetector
Funding
- National Natural Science Foundation of China (NSFC) [U1432249, 61804103]
- National Key R&D Program of China [2017YFA0205002]
- Natural Science Foundation of the Jiangsu Higher Education Institutions of China [18KJA535001, 14KJB150020]
- Natural Science Foundation of Jiangsu Province of China [BK20170343]
- China Postdoctoral Science Foundation [2017M610346]
- State Key Laboratory of Silicon Materials, Zhejiang University [SKL2018-03]
- Nantong Municipal Science and Technology Program [GY12017001]
- Collaborative Innovation Center of Suzhou Nano Science Technology
- Priority Academic Program Development of Jiangsu Higher Education Institutions (PAPD)
- 111 Project
- Joint International Research Laboratory of Carbon-Based Functional Materials and Devices
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Two-dimensional (2D) nonlayered nanomaterials have attracted extensive attention for electronic and optoelectronic applications recently because of their distinct properties. In this work, we first employed a facile one-step method to synthesize 2D nonlayered cadmium sulfide selenide (CdSxSe1-x, x = 0.33) nanosheets with a highly crystalline structure and then we introduced a generic spin-coating approach to fabricate hybrid nanomaterials composed of PbS quantum dots (QDs) and 2D CdSxSe1-x nanosheets and demonstrated their potential for high-performance broadband photodetectors. Compared with pure 2D CdSxSe1-x nanosheet photodetectors, the photoelectric performance of the PbS/CdSxSe1-x hybrid nanostructure is enhanced by 3 orders of magnitude under near-infrared (NIR) light illumination and maintains its performance in the visible (Vis) range. The photodetector exhibits a broadband response range from Vis to NIR with an ultrahigh light-to-dark current ratio (3.45 x 10(6)), a high spectral responsivity (1.45 x 10(3) A/W), and high detectivity (1.05 x 10(15) Jones). The proposed QDs/2D nonlayered hybrid nanostructure-based photodetector paves a promising way for next-generation high-performance broadband optoelectronic devices.
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