Journal
ELECTRONICS
Volume 7, Issue 8, Pages -Publisher
MDPI
DOI: 10.3390/electronics7080141
Keywords
memristive device; ZnO films; conditioned reflex
Categories
Funding
- National Natural Science Foundation of China [11574057]
- Science Foundation of Department of Education of JiangXi Province [GJJ15331]
- Guangdong Provincial Natural Science Foundation of China [2016A030313718]
- Foundation of JXUST [NSFJ2015-K11]
Ask authors/readers for more resources
As the fourth basic electronic component, the application fields of the memristive devices are diverse. The digital resistive switching with sudden resistance change is suitable for the applications of information storage, while the analog memristive devices with gradual resistance change are required in the neural system simulation. In this paper, a transparent device of ZnO films deposited by the magnetron sputtering on indium tin oxides (ITO) glass was firstly prepared and found to show typical analog memristive switching behaviors, including an I-V curve that exhibits a 'pinched hysteresis loops' fingerprint. The conductive mechanism of the device was discussed, and the LTspice model was built to emulate the pinched hysteresis loops of the I-V curve. Based on the LTspice model and the Pavlov training circuit, a conditioned reflex experiment has been successfully completed both in the computer simulation and the physical analog circuits. The prepared device also displayed synapses-like characteristics, in which resistance decreased and gradually stabilized with time under the excitation of a series of voltage pulse signals.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available