4.8 Article

High electrical conductivity and carrier mobility in oCVD PEDOT thin films by engineered crystallization and acid treatment

Journal

SCIENCE ADVANCES
Volume 4, Issue 9, Pages -

Publisher

AMER ASSOC ADVANCEMENT SCIENCE
DOI: 10.1126/sciadv.aat5780

Keywords

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Funding

  1. Eni S.p.A. under the Eni-MIT Solar Frontiers Center
  2. Center for Integrated Quantum Materials under NSF [DMR-1231319]
  3. Air Force Office of Scientific Research, Failure Testing Service, Multidisciplinary Research Program of the University Research Initiative [FA9550-15-1-0514]
  4. Center for Excitonics, an Energy Frontier Research Center - U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences [DE-SC0001088]
  5. Solid State Solar-Thermal Energy Conversion Center (S3TEC), an Energy Frontier Research Center - U.S. Department of Energy, Office of Basic Energy Sciences [DE-SC0001299]
  6. Samsung Scholarship
  7. NSF Materials Research Science and Engineering Center program [DMR-1719875]

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Air-stable, lightweight, and electrically conductive polymers are highly desired as the electrodes for next-generation electronic devices. However, the low electrical conductivity and low carrier mobility of polymers are the key bottlenecks that limit their adoption. We demonstrate that the key to addressing these limitations is tomolecularly engineer the crystallization and morphology of polymers. We use oxidative chemical vapor deposition (oCVD) and hydrobromic acid treatment as an effective tool to achieve such engineering for conducting polymer poly(3,4-ethylenedioxythiophene) (PEDOT). We demonstrate PEDOT thin filmswith a record-high electrical conductivity of 6259 S/cm and a remarkably high carriermobility of 18.45 cm(2) V-(1) s(-1) by inducing a crystallite-configuration transition using oCVD. Subsequent theoretical modeling reveals a metallic nature and an effective reduction of the carrier transport energy barrier between crystallized domains in these thin films. To validate this metallic nature, we successfully fabricate PEDOT-Si Schottky diode arrays operating at 13.56 MHz for radio frequency identification (RFID) readers, demonstratingwafer-scale fabrication compatible with conventional complementary metal-oxide semiconductor (CMOS) technology. The oCVD PEDOT thin films with ultrahigh electrical conductivity and high carrier mobility show great promise for novel high-speed organic electronics with low energy consumption and better charge carrier transport.

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