Self-organized growth of bamboo-like carbon nanotube arrays for field emission properties

Well-aligned nitrogen-doped carbon nanotube (N-CNTs) film was fabricated on silicon substrate by thermal chemical vapor deposition process with varying the growth temperature. The effect of growth temperature on morphology, microstructure and crystallinity for the growth of N-CNTs was studied. At all growth temperatures, the bamboo-like morphology of graphene layers with compartments in CNTs were observed in transmission electron microscope micrographs. The doping level and the type of nitrogen-related moieties were determined by X-ray photoelectron spectroscopy analysis. The compartment distance decreases with increase in nitrogen doping level in hexagonal graphite network. The increase in nitrogen doping level in N-CNTs will lead to decrease in crystallinity and in-plane crystallite size. Field emission study of nitrogen-doped carbon nanotubes grown at optimum parameters showed that they are good emitters with a turn-on and threshold field of 0.3 and 1.6 V/mu m, respectively. The maximum current density was observed to be 18.8 mA/cm(2) at the electric field of 2.1 V/mu m. It is considered that the enhanced field emission performance of doped nanotube is due to the presence of lone pairs of electrons on nitrogen atom that supplies more electrons to the conduction band.