Vacuum Nano-Triode in Nothing-On-Insulator Configuration Working in Terahertz Domain

This paper presents for the first time a new configuration of the nothing on insulator (NOI) structure: a vacuum NOI-triode. The main novelty of the new structure consists in the gate that is now part of the vacuum region as in conventional triodes. Each NOI-triode is introduced by a technological plan, followed by the concept validation and characteristics analysis. On the other hand, these NOI-triodes evolve from the NOI-transistor configuration. Consequently, some specific parameters to transistors are improved and permanently compared to some fabricated vacuum nano-transistors that are proposed in literature. For instance, the sub-threshold swing is suddenly decreased from 0.65...4 V/dec to 0.090 V/dec. A low swing is responsible to a high cutoff frequency. The paid price for the NOI-triode is a non-null gate current. To preserve the gained advantages and to keep as low as possible the I-Gate/I-Anode ratio, a special work regime must be selected. This paper devotes a large static and dynamic analysis to find the convenient work regime and possible technological solutions. The drive voltages can be decreased to 1 V, I-ON current of micro-amperes and excellent I-OFF current of atto-amperes. The internal capacitances of 0.9 aF recommend the NOI-triodes to 0.35...4 THz working regime.