Journal
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY
Volume 6, Issue 1, Pages 905-909Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JEDS.2018.2864180
Keywords
Ti-doped NiO; resistance switching; oxide diode; nonvolatile memory
Categories
Funding
- National Research Foundation of Korea - Ministry of Science and ICT [2017R1A2B4004560]
- DGIST Research and Development Programs of the Ministry of Science and ICT [18-NT-01, 18-BT-02, 18-01-HRSS-01]
- Ministry of Science & ICT (MSIT), Republic of Korea [18-01-HRSS-01, 18-BT-02] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- National Research Foundation of Korea [2017R1A2B4004560] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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Asymmetric sized single oxide diode (InZnOx/CuOx) with single resistor (Ti-doped NiO) device (1D-1R) was integrated into a crossbar array at room temperature to provide high current through the diode while keeping resistance switching localized in a small area. The Ti (0.1 wt %) doped NiO layer was fabricated inside an inverted cone-structure to localize switching and improve general device performance. We were able observe resistance switching up to around 100 cycles in the 1D-1R structure. In addition, the addition of the diode to the structure acted as an external resistance suppressing overflow current during Ti-doped NiO switching from a high resistance state to a low resistance state, thus improving switching distribution in both low (average = 3.2x10(-5) Omega, standard deviation = 1.3x10(-6)) and high (average = 2.8x10(-6) Omega, standard deviation = 6.7 x 10(-7)) resistance states.
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