4.7 Article

Mid-infrared integrated waveguide modulators based on silicon-on-lithium-niobate photonics

Journal

OPTICA
Volume 1, Issue 5, Pages 350-355

Publisher

OPTICAL SOC AMER
DOI: 10.1364/OPTICA.1.000350

Keywords

-

Categories

Funding

  1. National Science Foundation (NSF) CAREER [ECCS-1150672]
  2. Office of Naval Research (ONR) YIP [11296285]

Ask authors/readers for more resources

Heterogeneous integration techniques, such as direct bonding, have enabled solutions to many problems facing integrated photonics. In particular, the relatively new field of mid-infrared (mid-IR) integrated photonics has been hindered by the availability of functional, transparent substrates in this wavelength range. The key to achieving compact, high-performance optical modulation and frequency conversion is the monolithic integration of silicon photonics with a material with high second-order nonlinear susceptibility. By transferring large areas of thin, monocrystalline silicon to bulk lithium niobate (LiNbO3) substrates, the first silicon-based platform to exploit the Pockels or linear electro-optic effect in the mid-IR range is achieved. Integrated Mach-Zehnder interferometer modulators with an extinction ratio of similar to 8 dB, a half-wave voltage-length product of 26 V.cm, and an on-chip insertion loss of 3.3 dB are demonstrated at a wavelength of 3.39 mu m. Ultrathin optical waveguides fabricated and characterized on this platform exhibit a low transverse electric mode linear propagation loss of 2.5 dB/cm. Future capabilities such as wideband difference frequency generation for integrated mid-IR sources are envisioned for the demonstrated silicon-on-lithium-niobate platform. (C) 2014 Optical Society of America

Authors

I am an author on this paper
Click your name to claim this paper and add it to your profile.

Reviews

Primary Rating

4.7
Not enough ratings

Secondary Ratings

Novelty
-
Significance
-
Scientific rigor
-
Rate this paper

Recommended

No Data Available
No Data Available