Journal
MATERIALS RESEARCH EXPRESS
Volume 1, Issue 3, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/2053-1591/1/3/036403
Keywords
ZnO; transparent conducting oxide; buffer layer; sputtering; nitrogen mediated crystallization
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Funding
- Japan Science and Technology Agency, Precursory Research for Embryonic Science and Technology (JST, PRESTO)
- Japan Society for the Promotion of Science (JSPS)
- Kyushu University Foundation
- Japan International Cooperation Agency (JICA)
- Grants-in-Aid for Scientific Research [25630127] Funding Source: KAKEN
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We investigate the growth mechanism of ZnO deposited by a nitrogen mediated crystallization (NMC) method. NMC is a method in which nitrogen is used to control nucleation via a nitrogen adsorption-desorption behavior. The growth of NMC-ZnO is classified into three stages, that is, the pre-nucleation stage, nucleation and grain growth stage for 4-30 nm in thickness, and coalescence stage for 31-100 nm in thickness. NMC-ZnO nucleation takes place in a very short period compared to that for conventional ZnO. Hence, NMC-ZnO has a uniform grain size distribution, flat surface with less spiky grains, and a longer lateral correlation length of the surface, leading to a larger grain size than in conventional ZnO. Utilizing this NMC-ZnO as a buffer layer, low resistive aluminum doped zinc oxide ZnO: Al (AZO) films are obtained at the buffer layer film thickness ranging from 4 to 30 nm. The lowest resistivity is 3.4 x 10(-4) Omega cm for 90 nm thick AZO deposited on NMC-ZnO buffer layers of 10 and 30 nm in thickness.
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