Journal
MATERIALS RESEARCH EXPRESS
Volume 1, Issue 3, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/2053-1591/1/3/035905
Keywords
boron-doped diamond; crystal structure defects; transmission electron microscopy; fluorescence imaging; diffusion
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Funding
- Ministry of Education and Science of Russian Federation [14.577.21.0090]
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Boron doped diamond (BDD) single crystals have been grown under conditions of high isostatic pressure by the temperature gradient method. Numerous equilateral triangles were found on the fluorescence images of {111}-diamond facets. Structural peculiarities of BDD were investigated by JEM-2010 transmission electron microscope with GIF Quantum attachment for electron energy loss spectroscopy (EELS). High resolution image of diamond lattice revealed some distorted {111}-layers. EELS testifies the presence of boron in distorted regions of diamond lattice. The crystallographic features of BDD and their connection with the superconductivity are discussed.
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