Journal
PHOTONICS RESEARCH
Volume 3, Issue 4, Pages 110-114Publisher
OPTICAL SOC AMER
DOI: 10.1364/PRJ.3.000110
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Funding
- National High Technology Research and Development Program of China (863 Program) [2013AA031903]
- Youth 973 Program [2015CB932700]
- National Natural Science Foundation of China [91433107, 51222208, 51290273]
- Doctoral Fund of Ministry of Education of China [20123201120026]
- ARC DP [DP140101501]
- ARC DECRA [DE120101569]
- Victoria DSI top-up grant
- Natural Science Foundation of Jiangsu Province [BK20130328]
- China Postdoctoral Science Foundation [2014M551654]
- Jiangsu Province Postdoctoral Science Foundation [1301020A]
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Atomically thin MoS2 films have attracted significant attention due to excellent electrical and optical properties. The development of device applications demands the production of large-area thin film which is still an obstacle. In this work we developed a facile method to directly grow large-area MoS2 thin film on SiO2 substrate via ambient pressure chemical vapor deposition method. The characterizations by spectroscopy and electron microscopy reveal that the as-grown MoS2 film is mainly bilayer and trilayer with high quality. Back-gate field-effect transistor based on such MoS2 thin film shows carrier mobility up to 3.4 cm(2) V-1 s(-1) and on/off ratio of 10(5). The large-area atomically thin MoS2 prepared in this work has the potential for wide optoelectronic and photonic device applications. (C) 2015 Chinese Laser Press
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