Journal
CRYSTALS
Volume 3, Issue 1, Pages 257-274Publisher
MDPI
DOI: 10.3390/cryst3010257
Keywords
graphene; field-effect transistor; contact resistance; Raman
Funding
- Singapore Agency for Science, Technology and Research (A*STAR) [092 151 0088]
- NTU-SIMTech Collaborative Project [U10-J-023SU]
- 1000-plan funding in China
- Japan Society for the Promotion of Science (JSPS)
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The contact resistance between graphene and metal electrodes is crucial for the achievement of high-performance graphene devices. In this study, we review our recent study on the graphene metal contact characteristics from the following viewpoints: (1) metal preparation method; (2) asymmetric conductance; (3) annealing effect; (4) interfaces impact.
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