Journal
APL MATERIALS
Volume 2, Issue 10, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4896591
Keywords
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Funding
- State of Washington through Clean Energy Institute
- Cottrell Scholar Award
- [NSF-EFRI-1433496]
- Directorate For Engineering
- Emerging Frontiers & Multidisciplinary Activities [1433496] Funding Source: National Science Foundation
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Monolayer transition metal dichalcogenides are atomically thin direct-gap semiconductors that show a variety of novel electronic and optical properties with an optically accessible valley degree of freedom. While they are ideal materials for developing optical-driven valleytronics, the restrictions of exfoliated samples have limited exploration of their potential. Here, we present a physical vapor transport growth method for triangular WSe2 sheets of up to 30 mu m in edge length on insulating SiO2 substrates. Characterization using atomic force microscopy and optical microscopy reveals that they are uniform, monolayer crystals. Low temperature photoluminescence shows well resolved and electrically tunable excitonic features similar to those in exfoliated samples, with substantial valley polarization and valley coherence. The monolayers grown using this method are therefore of high enough optical quality for routine use in the investigation of optoelectronics and valleytronics. (C) 2014 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.
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