Journal
OPTICA
Volume 2, Issue 6, Pages 558-562Publisher
OPTICAL SOC AMER
DOI: 10.1364/OPTICA.2.000558
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Funding
- National Natural Science Foundation of China (NSFC) [11134009, 11374296, 11404328, 11464035, 61177040]
- National Basic Research Program of China [2011CB302005]
- National Science Foundation for Distinguished Young Scholars of China [61425021]
- Science and Technology Developing Project of Jilin Province [20111801, 20140101052JC]
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Electrically pumped lasing has been one of the most challenging issues for random lasers. Since holes are rare in most semiconductors, hole injection is necessary for electrically pumped lasers. Here in this article, by employing p-type diamond synthesized via a temperature gradient method under high-pressure and high-temperature conditions as a hole source, electrically pumped random lasing has been observed from p-Mg0.35Zn0.65O/n-ZnO core-shell nanowire structures. The mechanism for the lasing can be attributed to the recombination of the electrons in the nanowires with the holes injected from the p-type diamond. (C) 2015 Optical Society of America
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