Journal
2D MATERIALS
Volume 1, Issue 1, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/2053-1583/1/1/011004
Keywords
MoS2; photocurrent; single layer
Categories
Funding
- US Army Research Office MURI [W911NF-11-1-0362]
- Materials Simulation Center of the Materials Research Institute
- Research Computing and Cyberinfrastructure unit of Information Technology Services
- Penn-State Center for Nanoscale Science [DMR-0820404]
- JST-Japan under the Japanese regional Innovation Strategy Program by the Excellence
- REU program [NSF-DMR1062691]
- Laboratorio de Nanociencia y Nanotecnologia de la Universidad Iberoamericana
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We report the fabrication of a photosensor based on as-grown single crystal monolayers of MoS2 synthesized by chemical vapor deposition (CVD). The measurements were performed using Au/Ti leads in a two terminal configuration on CVD-grown MoS2 on a SiO2/Si substrate. The device was operated in air at room temperature at low bias voltages ranging from -2 V to 2 V and its sensing capabilities were tested for two different excitation wavelengths (514.5 nm and 488 nm). The responsivity reached 1.1 mA W-1 when excited with a 514.5 nm laser at a bias of 1.5 V. This responsivity is one order of magnitude larger than that reported from photo devices fabricated using CVD-grown multilayered WS2. A rectifying-effect was observed for the optically excited current, which was four times larger in the direct polarization bias when compared to the reverse bias photocurrent. Such rectifying behavior can be attributed to the asymmetric electrode placement on the triangular MoS2 monocrystal. It is envisioned that these components could eventually be used as efficient and low cost photosensors based on CVD-grown transition metal dichalcogenide monolayers.
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