Related references
Note: Only part of the references are listed.Oxygen termination of homoepitaxial diamond surface by ozone and chemical methods: An experimental and theoretical perspective
Javier Navas et al.
APPLIED SURFACE SCIENCE (2018)
Comprehensive electrical analysis of metal/Al2O3/O-terminated diamond capacitance
T. T. Pham et al.
JOURNAL OF APPLIED PHYSICS (2018)
Thermal conductivity of ultrathin nano-crystalline diamond films determined by Raman thermography assisted by silicon nanowires
Julian Anaya et al.
APPLIED PHYSICS LETTERS (2015)
Electronic states of NO2-exposed H-terminated diamond/Al2O3 heterointerface studied by synchrotron radiation photoemission and X-ray absorption spectroscopy
Kazutoshi Takahashi et al.
APPLIED PHYSICS LETTERS (2014)
C-H surface diamond field effect transistors for high temperature (400 °C) and high voltage (500 V) operation
H. Kawarada et al.
APPLIED PHYSICS LETTERS (2014)
Metal oxide semiconductor structure using oxygen-terminated diamond
G. Chicot et al.
APPLIED PHYSICS LETTERS (2013)
Porous Aluminas: The biotemplate method for the synthesis of stable high surface area aluminas
Monica Benitez Guerrero et al.
BOLETIN DE LA SOCIEDAD ESPANOLA DE CERAMICA Y VIDRIO (2013)
Interfacial band configuration and electrical properties of LaAlO3/Al2O3/hydrogenated-diamond metal-oxide-semiconductor field effect transistors
J. W. Liu et al.
JOURNAL OF APPLIED PHYSICS (2013)
Band offsets, Schottky barrier heights, and their effects on electronic devices
John Robertson
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A (2013)
Hall hole mobility in boron-doped homoepitaxial diamond
J. Pernot et al.
PHYSICAL REVIEW B (2010)
Low-leakage p-type diamond Schottky diodes prepared using vacuum ultraviolet light/ozone treatment
T. Teraji et al.
JOURNAL OF APPLIED PHYSICS (2009)
Energy-band parameters of atomic-layer-deposition Al2O3/InGaAs heterostructure
M. L. Huang et al.
APPLIED PHYSICS LETTERS (2006)
Temperature dependent DC and RF performance of diamond MESFET
H. Ye et al.
DIAMOND AND RELATED MATERIALS (2006)
Boehmite derived γ-alumina system.: 1.: Structural evolution with temperature, with the identification and structural determination of a new transition phase, γ′-alumina
G Paglia et al.
CHEMISTRY OF MATERIALS (2004)
Tetragonal structure model for boehmite-derived γ-alumina -: art. no. 144110
G Paglia et al.
PHYSICAL REVIEW B (2003)
The boron acceptor in diamond
K Thonke
SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2003)
Hydrogen-induced transport properties of holes in diamond surface layers
CE Nebel et al.
APPLIED PHYSICS LETTERS (2001)
Band gap of amorphous and well-ordered Al2O3 on Ni3Al(100)
I Costina et al.
APPLIED PHYSICS LETTERS (2001)