Journal
NANOMATERIALS
Volume 8, Issue 8, Pages -Publisher
MDPI
DOI: 10.3390/nano8080584
Keywords
diamond; MOSFET; TEM; bandgap; dielectric functions; alumina; MPCVD
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Funding
- Spanish Ministry of Economy and Competitiveness [TEC2014-54357-C2-2-R, TEC2017-86347-C2-1-R]
- European H2020 Program [SEP-210184415]
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In contrast to Si technology, amorphous alumina cannot act as a barrier for a carrier at diamond MOSFET gates due to their comparable bandgap. Indeed, gate leaks are generally observed in diamond/alumina gates. A control of the alumina crystallinity and its lattice matching to diamond is here demonstrated to avoid such leaks. Transmission electron microscopy analysis shows that high temperature atomic layer deposition, followed by annealing, generates monocrystalline reconstruction of the gate layer with an optimum lattice orientation with respect to the underneath diamond lattice. Despite the generation of gamma-alumina, such lattice control is shown to prohibit the carrier transfer at interfaces and across the oxide.
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