Journal
MATERIALS RESEARCH EXPRESS
Volume 2, Issue 8, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/2053-1591/2/8/085902
Keywords
thermal conductivity; GaN; phonon scattering; electron-phonon coupling
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Funding
- Wroclaw Research Centre EIT+ within the project 'The Application of Nanotechnology in Advanced Materials'-NanoMat [POIG.01.01.02-02-002/08]
- European Regional Development Fund (Operational Programmer Innovative Economy) [1.1.2]
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Here we report the results of an experimental study of the thermal conductivity of GaN crystals doped by oxygen with concentrations of 4 x 10(16), 2.6 x 10(18) and 1.1 x 10(20) cm(-3), carried out in the temperature interval 7-318 K. We observed the highest thermal conductivity ever reported for GaN, 269 W m(-1) K-1 at 300 K, in the sample with the lowest oxygen content. This result is explained by the renormalization of GaN elastic constants, caused by the effect of spontaneous polarization. Results were analyzed using the Callaway model. The contribution of phonon scattering by free carriers in doped GaN crystals was considered for the first time. We show that free electrons reduce the thermal conductivity by up to 32%-42% at 300 K for a sample with a 1.1 x 10(20) cm(-3) of oxygen concentration.
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