4.5 Review

Graphene field-effect transistor for radio-frequency applications : review

Journal

CARBON LETTERS
Volume 13, Issue 1, Pages 17-22

Publisher

KOREAN CARBON SOC
DOI: 10.5714/CL.2012.13.1.017

Keywords

graphene; field-effect transistor; transistor; ambipolar; low-noise amplifier; radio-frequency; mixer; multiplier; phase noise; radiometer; electromagnetic interference; Antenna; sensors; nanoelectromechanical system; interconnects; complementary metal-oxide-semiconductor

Funding

  1. Defense Advanced Research Projects Agency (DARPA)
  2. DARPA under SPAWAR [N66001-08-C-2048]

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Currently, graphene is a topic of very active research in fields from science to potential applications. For various radio-frequency (RF) circuit applications including low-noise amplifiers, the unique ambipolar nature of graphene field-effect transistors can be utilized for high-performance frequency multipliers, mixers and high-speed radiometers. Potential integration of graphene on Silicon substrates with complementary metal-oxide-semiconductor compatibility would also benefit future RF systems. The future success of the RF circuit applications depends on vertical and lateral scaling of graphene metal-oxide-semiconductor field-effect transistors to minimize parasitics and improve gate modulation efficiency in the channel. In this paper, we highlight recent progress in graphene materials, devices, and circuits for RF applications. For passive RF applications, we show its transparent electromagnetic shielding in Ku-band and transparent antenna, where its success depends on quality of materials. We also attempt to discuss future applications and challenges of graphene.

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