Journal
JOURNAL OF ADVANCED CERAMICS
Volume 4, Issue 3, Pages 226-231Publisher
TSINGHUA UNIV PRESS
DOI: 10.1007/s40145-015-0153-1
Keywords
thermoelectric (TE); CdO ceramics; sintering temperature; solid-state reaction
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Funding
- Natural Science Foundation of Hebei Province, China [A2014201176]
- Science and Technology Research Projects of Colleges and Universities in Hebei Province, China [ZD2014018]
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The effect of sintering temperature on thermoelectric properties of CdO ceramics was investigated by solid-state reaction method within the temperature range of 700-1000 degrees C. With the increase of sintering temperature, both the grain size and the carrier concentration of these samples increased, while the Seebeck coefficient decreased. The highest dimensionless figure of merit ZT, 0.34, was obtained at 1023 K for the sample sintered at 800 degrees C, suggesting the potential application of CdO ceramics in thermoelectric (TE) devices.
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