Related references
Note: Only part of the references are listed.Modulation of NiGe/Ge Schottky barrier height by S and P co-introduction
Masahiro Koike et al.
APPLIED PHYSICS LETTERS (2013)
Effect of metal interaction on the Schottky barrier height on adsorbate-terminated silicon surfaces
Yang Li et al.
APPLIED SURFACE SCIENCE (2013)
Electrical properties of Pt/n-type Ge Schottky contact with PEDOT: PSS interlayer
A. Ashok Kumar et al.
JOURNAL OF ALLOYS AND COMPOUNDS (2013)
Enhancement of the Schottky barrier height of Au/ZnO nanocrystal by zinc vacancies using a hydrothermal seed layer
J. D. Hwang et al.
NANOTECHNOLOGY (2013)
Study of Schottky barrier height modulation for NiSi/Si contact with an antimony interlayer
Xiao Guo et al.
MICROELECTRONIC ENGINEERING (2013)
Modification of Schottky barrier height on Si (111) by Ga-termination
Wei Long et al.
SURFACE SCIENCE (2013)
Inhomogeneous ohmic contacts: Barrier height and contact area determination
Yang Li et al.
APPLIED PHYSICS LETTERS (2012)
Low Electron Schottky Barrier Height of NiGe/Ge Achieved by Ion Implantation After Germanidation Technique
Zhiqiang Li et al.
IEEE ELECTRON DEVICE LETTERS (2012)
Selenium Segregation for Effective Schottky Barrier Height Reduction in NiGe/n-Ge Contacts
Yi Tong et al.
IEEE ELECTRON DEVICE LETTERS (2012)
The Effect of Fixed Charge in Tunnel-Barrier Contacts for Fermi-Level Depinning in Germanium
Arunanshu M. Roy et al.
IEEE ELECTRON DEVICE LETTERS (2012)
Modulation of Schottky Barrier Height of Metal/TaN/n-Ge Junctions by Varying TaN Thickness
Zheng Wu et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2012)
On the alleviation of Fermi-level pinning by ultrathin insulator layers in Schottky contacts
Winfried Moench
JOURNAL OF APPLIED PHYSICS (2012)
Barrier-height modification in Schottky silicon diodes with highly doped 3D and 2D layers
A. V. Murel et al.
SEMICONDUCTORS (2012)
Barrier height enhancement and temperature dependence of the electrical characteristics of Al Schottky contacts on p-GaAs with organic Rhodamine B interfacial layer
Murat Soylu et al.
SUPERLATTICES AND MICROSTRUCTURES (2012)
Interplay of native point defects with ZnO Schottky barriers and doping
Leonard J. Brillson et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B (2012)
Fermi level depinning by a C-containing layer in a metal/Ge structure by using a chemical bath
Wang Wei et al.
JOURNAL OF SEMICONDUCTORS (2012)
Very low effective Schottky barrier height for erbium disilicide contacts on n-Si through arsenic segregation
Nicolas Reckinger et al.
APPLIED PHYSICS LETTERS (2011)
Extraction of correct Schottky barrier height of sulfur implanted NiSi/n-Si junctions: Junction doping rather than barrier height lowering
J. Chan et al.
APPLIED PHYSICS LETTERS (2011)
Impact of fixed charge on metal-insulator-semiconductor barrier height reduction
Jenny Hu et al.
APPLIED PHYSICS LETTERS (2011)
Schottky barrier height tuning of silicides on p-type Si (100) by aluminum implantation and pulsed excimer laser anneal
Shao-Ming Koh et al.
JOURNAL OF APPLIED PHYSICS (2011)
Schottky barriers in carbon nanotube-metal contacts
Johannes Svensson et al.
JOURNAL OF APPLIED PHYSICS (2011)
Role of Backbone Charge Rearrangement in the Bond-Dipole and Work Function of Molecular Monolayers
Tali Aqua et al.
JOURNAL OF PHYSICAL CHEMISTRY C (2011)
Mechanisms of Schottky Barrier Control on n-Type Germanium Using Ge3N4 Interlayers
R. R. Lieten et al.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY (2011)
Schottky barrier height modification in Au/n-type 6H-SiC structures by PbS interfacial layer
Y. Gulen et al.
MICROELECTRONIC ENGINEERING (2011)
Effect of surface chemical composition on the work function of silicon substrates modified by binary self-assembled monolayers
Che-Hung Kuo et al.
PHYSICAL CHEMISTRY CHEMICAL PHYSICS (2011)
Schottky barrier height modulation by atomic dipoles at the silicide/silicon interface
Yoshifumi Nishi et al.
PHYSICAL REVIEW B (2011)
A superstructural 2D-phase diagram for Ga on the Si(111)-7x7 system
Praveen Kumar et al.
SOLID STATE COMMUNICATIONS (2011)
Controlled modification of Schottky barrier height by partisan interlayer
Yang Li et al.
SOLID STATE COMMUNICATIONS (2011)
Schottky-barrier height modulation of metal/In0.53Ga0.47As interfaces by insertion of atomic-layer deposited ultrathin Al2O3
Runsheng Wang et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B (2011)
Tuning of the Schottky barrier height in NiGe/n-Ge using ion-implantation after germanidation technique
Yue Guo et al.
APPLIED PHYSICS LETTERS (2010)
Investigating the origin of Fermi level pinning in Ge Schottky junctions using epitaxially grown ultrathin MgO films
Yi Zhou et al.
APPLIED PHYSICS LETTERS (2010)
Contact Resistance for End-Contacted Metal-Graphene and Metal-Nanotube Interfaces from Quantum Mechanics
Yuki Matsuda et al.
JOURNAL OF PHYSICAL CHEMISTRY C (2010)
Bidirectional Control of Silicon's Surface Potential by Means of Molecular Coverage
Sreenivasa Reddy Puniredd et al.
JOURNAL OF PHYSICAL CHEMISTRY C (2010)
Theoretical study of Schottky-barrier formation at epitaxial rare-earth-metal/semiconductor interfaces
Kris T. Delaney et al.
PHYSICAL REVIEW B (2010)
Electronic Structure of Self-Assembled Monolayers on Au(111) Surfaces: The Impact of Backbone Polarizability
LinJun Wang et al.
ADVANCED FUNCTIONAL MATERIALS (2009)
Near band edge Schottky barrier height modulation using high-κ dielectric dipole tuning mechanism
B. E. Coss et al.
APPLIED PHYSICS LETTERS (2009)
Modified NiSi/Si Schottky Barrier Height by Nitrogen Implantation
Pankaj Kalra et al.
ELECTROCHEMICAL AND SOLID STATE LETTERS (2009)
Fermi level depinning in metal/Ge Schottky junction for metal source/drain Ge metal-oxide-semiconductor field-effect-transistor application
Masaharu Kobayashi et al.
JOURNAL OF APPLIED PHYSICS (2009)
Massive point defect redistribution near semiconductor surfaces and interfaces and its impact on Schottky barrier formation
L. J. Brillson et al.
PHYSICA B-CONDENSED MATTER (2009)
First-principles study of the rectifying properties of Pt/TiO2 interface
Tomoyuki Tamura et al.
PHYSICAL REVIEW B (2009)
Termination control of the interface dipole in La0.7Sr0.3MnO3/Nb:SrTiO3 (001) Schottky junctions
Yasuyuki Hikita et al.
PHYSICAL REVIEW B (2009)
Schottky barriers at transition-metal/SrTiO3(001) interfaces
M. Mrovec et al.
PHYSICAL REVIEW B (2009)
Understanding the electronic properties of molecule/metal junctions: The case study of thiols on gold
V. De Renzi
SURFACE SCIENCE (2009)
Intramolecular dipole coupling and depolarization in self-assembled monolayers
Maria L. Sushko et al.
ADVANCED FUNCTIONAL MATERIALS (2008)
A significant shift of Schottky barrier heights at strongly pinned metal/germanium interface by inserting an ultra-thin insulating film
Tomonori Nishimura et al.
APPLIED PHYSICS EXPRESS (2008)
Tuning the Schottky barrier height of nickel silicide on p-silicon by aluminum segregation
Mantavya Sinha et al.
APPLIED PHYSICS LETTERS (2008)
Alleviation of Fermi-level pinning effect on metal/germanium interface by insertion of an ultrathin aluminum oxide
Yi Zhou et al.
APPLIED PHYSICS LETTERS (2008)
Influence of oxygen vacancies on Schottky contacts to ZnO
M. W. Allen et al.
APPLIED PHYSICS LETTERS (2008)
Ohmic contact formation on n-type Ge
R. R. Lieten et al.
APPLIED PHYSICS LETTERS (2008)
Ab initio modeling of Schottky-barrier height tuning by yttrium at nickel silicide/silicon interface
Li Geng et al.
IEEE ELECTRON DEVICE LETTERS (2008)
Metal-carbon nanotube contacts: The link between Schottky barrier and chemical bonding
Vincenzo Vitale et al.
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY (2008)
Schottky-barrier height tuning of NiGe/n-Ge contacts using As and P segregation
M. Mueller et al.
MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS (2008)
Ab initio study of atomic structure and Schottky barrier height at the GaAs/Ni0.5Pt0.5Ge interface
Manish K. Niranjan et al.
PHYSICAL REVIEW B (2008)
Barrier height at (Ba,Sr)TiO3/Pt interfaces studied by photoemission
R. Schafranek et al.
PHYSICAL REVIEW B (2008)
Partition theory: A very simple illustration
Morrel H. Cohen et al.
JOURNAL OF PHYSICAL CHEMISTRY A (2007)
Electrostatic properties of ideal and non-ideal polar organic monolayers: Implications for electronic devices
Amir Natan et al.
ADVANCED MATERIALS (2007)
Exchange and correlation in open systems of fluctuating electron number
John P. Perdew et al.
PHYSICAL REVIEW A (2007)
Evidence for strong Fermi-level pinning due to metal-induced gap states at metal/germanium interface
Tomonori Nishimura et al.
APPLIED PHYSICS LETTERS (2007)
Depolarization effects in self-assembled monolayers: A quantum-chemical insight
David Cornil et al.
ADVANCED FUNCTIONAL MATERIALS (2007)
Dipole-dipole interactions and the structure of self-assembled monolayers
Maria L. Sushko et al.
JOURNAL OF PHYSICAL CHEMISTRY B (2007)
Toward control of the metal-organic interfacial electronic structure in molecular electronics:: A first-principles study on self-assembled monolayers of π-conjugated molecules on noble metals
Georg Heimel et al.
NANO LETTERS (2007)
Interfacial differences in enhanced schottky barrier height Au/n-GaAs diodes deposited at 77 K
Andrew M. Herrero et al.
APPLIED SURFACE SCIENCE (2007)
Energy dependence on fractional charge for strongly interacting subsystems
Steven M. Valone et al.
PHYSICAL REVIEW LETTERS (2006)
Controlling Au/n-GaAs junctions by partial molecular monolayers
Hossam Haick et al.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE (2006)
Electronic structure of Si(111)-bound alkyl monolayers: Theory and experiment
Lior Segev et al.
PHYSICAL REVIEW B (2006)
A generalization of the charge equilibration method for nonmetallic materials
Razvan A. Nistor et al.
JOURNAL OF CHEMICAL PHYSICS (2006)
Work functions of self-assembled monolayers on metal surfaces by first-principles calculations
Paul C. Rusu et al.
PHYSICAL REVIEW B (2006)
Size-dependent effects on electrical contacts to nanotubes and nanowires
Francois Leonard et al.
PHYSICAL REVIEW LETTERS (2006)
Tuning the Schottky barrier height in metal-alkaline earth oxide interfaces
Matias Nunez et al.
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS (2006)
Interfacial electrostatics of self-assembled monolayers of alkane thiolates on Au(111): Work function modification and molecular level alignments
R. Rousseau et al.
JOURNAL OF PHYSICAL CHEMISTRY B (2006)
First-principles theory of metal-alkaline earth oxide interfaces
M Nuñez et al.
PHYSICAL REVIEW B (2006)
Controlling semiconductor/metal junction barriers by incomplete, nonideal molecular monolayers
Hossam Haick et al.
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY (2006)
Cooperative effects and dipole formation at semiconductor and self-assembled-monolayer interfaces
Amir Natan et al.
PHYSICAL REVIEW B (2006)
Modulation of NiGe/Ge Schottky barrier height by sulfur segregation during Ni germanidation
K Ikeda et al.
APPLIED PHYSICS LETTERS (2006)
The temperature dependence of current-voltage characteristics of the Au/Polypyrrole/p-Si/Al heterojunctions
S Aydogan et al.
JOURNAL OF PHYSICS-CONDENSED MATTER (2006)
Improvement of the ohmic characteristics of Pd contacts to p-type GaN using an Ag interlayer
JO Song et al.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2006)
Effect of contact properties on current transport in metal/molecule/GaAs devices
S Lodha et al.
JOURNAL OF APPLIED PHYSICS (2006)
Fermi-level depinning for low-barrier Schottky source/drain transistors
D Connelly et al.
APPLIED PHYSICS LETTERS (2006)
Thermal stability of Au Schottky diodes on GaAs deposited at either 77 or 300 K
Hung-Ta Wang et al.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY (2006)
Experimental estimation of the electric dipole moment and polarizability of titanyl phthalocyanine using ultraviolet photoelectron spectroscopy
H Fukagawa et al.
PHYSICAL REVIEW B (2006)
Electronic structure of S-C6H5 self-assembled monolayers on Cu(111) and Au(111) substrates
V Perebeinos et al.
CHEMICAL PHYSICS (2005)
A density functional theory-based chemical potential equalisation approach to molecular polarizability
A Wadehra et al.
JOURNAL OF CHEMICAL SCIENCES (2005)
Chemical pathways in the interactions of reactive metal atoms with organic surfaces: Vapor deposition of Ca and Ti on a methoxy-terminated alkanethiolate monolayer on Au
AV Walker et al.
JOURNAL OF PHYSICAL CHEMISTRY B (2005)
Core-level spectroscopy study of the Li/Si(111)-3 x 1, Na/Si(111)-3 x 1, and K/Si(111)-3 x 1 surfaces
M Gurnett et al.
PHYSICAL REVIEW B (2005)
Formation and reactivity of high quality halogen terminated Si(111) surfaces
BJ Eves et al.
SURFACE SCIENCE (2005)
Tuning of metal work functions with self-assembled monolayers
B de Boer et al.
ADVANCED MATERIALS (2005)
Tuning of NiSi/Si Schottky barrier heights by sulfur segregation during Ni silicidation
QT Zhao et al.
APPLIED PHYSICS LETTERS (2005)
Electrical characteristics of Pt Schottky contacts on sulfide-treated n-type ZnO -: art. no. 022101
SH Kim et al.
APPLIED PHYSICS LETTERS (2005)
Metallic contact formation for molecular electronics: interactions between vapor-deposited metals and self-assembled monolayers of conjugated mono- and dithiols
B de Boer et al.
LANGMUIR (2004)
Mg adsorption on Si(001) surface from first principles
R Shaltaf et al.
PHYSICAL REVIEW B (2004)
Gas phase chlorination of hydrogen-passivated silicon surfaces
S Rivillon et al.
APPLIED PHYSICS LETTERS (2004)
Ab initio study of Schottky barriers at metal-nanotube contacts -: art. no. 233405
B Shan et al.
PHYSICAL REVIEW B (2004)
Contacting organic molecules by metal evaporation
H Haick et al.
PHYSICAL CHEMISTRY CHEMICAL PHYSICS (2004)
Consistent charge equilibration (CQEq) method: application to amino acids and crambin protein
T Ogawa et al.
CHEMICAL PHYSICS LETTERS (2004)
Fabrication of arrays of gold islands on self-assembled monolayers using pulsed laser deposition through nanosieves
EA Speets et al.
NANO LETTERS (2004)
Electrostatics of nanowire transistors
J Guo et al.
IEEE TRANSACTIONS ON NANOTECHNOLOGY (2003)
Inductive electronegativity scale. Iterative calculation of inductive partial charges
A Cherkasov
JOURNAL OF CHEMICAL INFORMATION AND COMPUTER SCIENCES (2003)
Field-effect transistor on SrTiO3 with sputtered Al2O3 gate insulator
K Ueno et al.
APPLIED PHYSICS LETTERS (2003)
Schottky barrier heights at polar metal/semiconductor interfaces
C Berthod et al.
PHYSICAL REVIEW B (2003)
Molecule-metal polarization at rectifying GaAs interfaces
A Vilan et al.
JOURNAL OF PHYSICAL CHEMISTRY B (2003)
Electrical contacts to molecular layers by nanotransfer printing
YL Loo et al.
NANO LETTERS (2003)
Nature of electrical contacts in a metal-molecule-semiconductor system
JWP Hsu et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B (2003)
The interface phase and the Schottky barrier for a crystalline dielectric on silicon
RA McKee et al.
SCIENCE (2003)
Removal of dangling bonds and surface states on silicon(001) with a monolayer of selenium
M Tao et al.
APPLIED PHYSICS LETTERS (2003)
Schottky-barrier behavior of metals on n- and p-type 6H-SiC -: art. no. 075312
MO Aboelfotoh et al.
PHYSICAL REVIEW B (2003)
Soft contact deposition onto molecularly modified GaAs. Thin metal film flotation: Principles and electrical effects
A Vilan et al.
ADVANCED FUNCTIONAL MATERIALS (2002)
The electronegativity equalization method I: Parametrization and validation for atomic charge calculations
P Bultinck et al.
JOURNAL OF PHYSICAL CHEMISTRY A (2002)
A versatile experimental approach for understanding electron transport through organic materials
MA Rampi et al.
CHEMICAL PHYSICS (2002)
Additive, nanoscale patterning of metal films with a stamp and a surface chemistry mediated transfer process: Applications in plastic electronics
YL Loo et al.
APPLIED PHYSICS LETTERS (2002)
An approach to transport measurements of electronic molecules
I Amlani et al.
APPLIED PHYSICS LETTERS (2002)
Electronegativity: Atomic charge and core ionization energies
JL Reed
JOURNAL OF PHYSICAL CHEMISTRY A (2002)
Chemical lowering of the interface Fermi level of n and p types GaAs/Al Schottky diodes
H Mazari et al.
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY (2002)
A molecular electrostatic potential bond critical point model for atomic and group electronegativities
CH Suresh et al.
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY (2002)
Barrier height enhancement in the Au/n-GaAs Schottky diodes with anodization process
M Biber et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B (2002)
Termination effects at metal/ceramic junctions:: Schottky barrier heights and interface properties of the β-SiC(001)/Ni systems -: art. no. 235312
G Profeta et al.
PHYSICAL REVIEW B (2001)
Formation of an electric dipole at metal-semiconductor interfaces
RT Tung
PHYSICAL REVIEW B (2001)
Recent advances in Schottky barrier concepts
RT Tung
MATERIALS SCIENCE & ENGINEERING R-REPORTS (2001)
Enhancement of metal-semiconductor barrier height with superthin silicon dioxide films deposited on gallium arsenide by liquid phase deposition
CJ Huang
JOURNAL OF APPLIED PHYSICS (2001)
Band offset and structure of SrTiO3/Si(001) heterojunctions
SA Chambers et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS (2001)
Classical fluctuating charge theories:: The maximum entropy valence bond formalism and relationships to previous models
J Morales et al.
JOURNAL OF PHYSICAL CHEMISTRY A (2001)
Engineered Schottky barriers on n-In0.35Ga0.65As
ZJ Horváth et al.
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY (2001)
Functionalized self-assemble alkanethiol monolayers on Au(111) electrodes:: 2.: Silver electrodeposition
H Hagenström et al.
LANGMUIR (2001)
A nanometre-scale electronic switch consisting of a metal cluster and redox-addressable groups
DI Gittins et al.
NATURE (2000)
Size-dependent electrical behavior of spatially inhomogeneous barrier height regions on silicon
RC Rossi et al.
APPLIED PHYSICS LETTERS (2000)
Koster-Slater model for the interface-state problem
M Di Ventra et al.
PHYSICAL REVIEW B (2000)
Two levels of Ni/n-GaAs Schottky barrier heights formed on a wafer by controlling pH of pretreatment chemicals: Effect of oxygen adsorption
T Tsuzuku et al.
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS (2000)
Ab initio studies of the CoSi2(100)/Si(100) interface
R Stadler et al.
PHYSICAL REVIEW B (2000)
Schottky barrier tuning with heterovalent interlayers: Al/Ge/GaAs versus Al/Si/GaAs
C Berthod et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B (2000)
Tunable Schottky barrier contacts to InxGa1-xAs
C Marinelli et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B (2000)
Chemical bonding and Fermi level pinning at metal-semiconductor interfaces
RT Tung
PHYSICAL REVIEW LETTERS (2000)
Metal-induced gap states and Schottky barrier heights at nonreactive GaN/noble-metal interfaces
S Picozzi et al.
PHYSICAL REVIEW B (2000)
A chemical potential equalization model for treating polarization in molecular mechanical force fields
C Bret et al.
MOLECULAR PHYSICS (2000)
Mg/Si(100) reconstructions studied by scanning tunneling microscopy
O Kubo et al.
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS (2000)
Degenerate ground states and a fractional number of electrons in density and reduced density matrix functional theory
WT Yang et al.
PHYSICAL REVIEW LETTERS (2000)
Role of Fermi-level pinning in nanotube Schottky diodes
F Léonard et al.
PHYSICAL REVIEW LETTERS (2000)
Barrier height inhomogeneities of epitaxial CoSi2 Schottky contacts on n-Si (100) and (111)
SY Zhu et al.
SOLID-STATE ELECTRONICS (2000)
Molecular control over Au/GaAs diodes
A Vilan et al.
NATURE (2000)
On the forward bias excess capacitance at intimate and MIS Schottky barrier diodes with perfect or imperfect ohmic back contact
B Bati et al.
PHYSICA SCRIPTA (2000)
Unpinning of the Au/GaAs interfacial Fermi level by means of ultrathin undoped silicon interlayer inclusion
J Ivanco et al.
JOURNAL OF APPLIED PHYSICS (2000)
Ab initio calculations of the β-SiC(001)/Ti interface
M Kohyama et al.
PHYSICAL REVIEW B (2000)
Mechanisms for the reduction of the Schottky barrier heights of high-quality nonalloyed Pt contacts on surface-treated p-GaN
JS Jang et al.
JOURNAL OF APPLIED PHYSICS (2000)