Journal
ACS PHOTONICS
Volume 5, Issue 9, Pages 3820-3827Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsphotonics.8b00853
Keywords
PtSe2; 2D layered materials; heterojunction; infrared photodetector; CdTe
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Funding
- National Natural Science Foundation of China [61605174, 61774136, 11604302]
- Key Projects of Higher Education in Henan Province [17A140012]
- Research Grants Council, University Grants Committee (RGC, UGC) [GRF 152109/16E]
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The rich variety and attractive properties of two-dimensional (2D) layered nanomaterials provide an ideal platform for fabricating next generation of advanced optoelectronic devices. Recently, a newly discovered 2D layered PtSe2 thin film has exhibited outstanding broadband sensitivity and optoelectronic properties. In our work, a large-area 2D layered PtSe2 thin film was used to construct the PtSe2/CdTe heterojunction infrared photodetector (PD). This PD exhibited a broad detection range coverage from 200 to 2000 nm with a high responsivity of 506.5 mA/W, a high specific detectivity of 4.2 x 10(11) Jones, a high current on/off ratio of 7 x 10(6), and a fast response speed of 8.1/43.6 mu s at room temperature. Additionally, the PtSe2/CdTe heterojunction PD exhibits excellent repeatability and stability in air. The high-performance of the PtSe2/CdTe heterojunction PD demonstrated in this work reveals that it has great potential to be used for broadband infrared detection.
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