Journal
IEEE ACCESS
Volume 3, Issue -, Pages 287-302Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/ACCESS.2015.2422842
Keywords
Biosensors; field effect transistors; nanowires; semiconductor nanostructures; nanobiosensors
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Funding
- Tianjin Applied Basic Research and Advanced Technology [14JCYBJC41500]
- 111 Project [B07014]
- Natural Sciences and Engineering Council of Canada
- U.S. Army Research Office [MURI W911NF-11-1-0024]
- [FA8650-9-D-5037 0019]
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Silicon nanowire field-effect transistors (Si-NW FETs) have been demonstrated as a versatile class of potentiometric nanobiosensors for real time, label-free, and highly sensitive detection of a wide range of biomolecules. In this review, we summarize the principles of such devices and recent developments in device fabrication, fluid integration, surface functionalization, and biosensing applications. The main focus of this review is on CMOS compatible Si-NW FET nanobiosensors.
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