Journal
NANOSCALE RESEARCH LETTERS
Volume 9, Issue -, Pages -Publisher
SPRINGEROPEN
DOI: 10.1186/1556-276X-9-24
Keywords
InPBi; HRXRD; Absorption; Photoluminescence; Molecular beam epitaxy
Funding
- National Basic Research Program of China [2014CB643900, 2012CB619202]
- National Natural Science Foundation of China [61334004, 61204133, 61275113]
- Guiding Project of Chinese Academy of Sciences [XDA5-1]
- Key Research Program of the Chinese Academy of Sciences [KGZD-EW-804]
- Innovation Research Group Project of National Natural Science Foundation [61321492]
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InPBi thin films have been grown on InP by gas source molecular beam epitaxy. A maximum Bi composition of 2.4% is determined by Rutherford backscattering spectrometry. X-ray diffraction measurements show good structural quality for Bi composition up to 1.4% and a partially relaxed structure for higher Bi contents. The bandgap was measured by optical absorption, and the bandgap reduction caused by the Bi incorporation was estimated to be about 56 meV/Bi%. Strong and broad photoluminescence signals were observed at room temperature for samples with x (Bi) < 2.4%. The PL peak position varies from 1.4 to 1.9 mu m, far below the measured InPBi bandgap.
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