Journal
NANOSCALE RESEARCH LETTERS
Volume 9, Issue -, Pages -Publisher
SPRINGEROPEN
DOI: 10.1186/1556-276X-9-144
Keywords
Quantum dot; Quantum cascade laser; MBE; Mid-infrared
Funding
- National Research Projects of China [2013CB632800, 60525406, 60736031, 2011YQ13001802-04]
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We demonstrated an unambiguous quantum dot cascade laser based on InGaAs/GaAs/InAs/InAlAs heterostructure by making use of self-assembled quantum dots in the Stranski-Krastanow growth mode and two-step strain compensation active region design. The prototype generates stimulated emission at lambda similar to 6.15 mu m and a broad electroluminescence band with full width at half maximum over 3 mu m. The characteristic temperature for the threshold current density within the temperature range of 82 to 162 K is up to 400 K. Moreover, our materials show the strong perpendicular mid-infrared response at about 1,900 cm(-1). These results are very promising for extending the present laser concept to terahertz quantum cascade laser, which would lead to room temperature operation.
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