Journal
NANOSCALE RESEARCH LETTERS
Volume 9, Issue -, Pages -Publisher
SPRINGEROPEN
DOI: 10.1186/1556-276X-9-552
Keywords
ReRAM; Memristor; Memcapacitor; TiO2; Nanoscale
Funding
- CHIST-ERA ERA-Net
- EPSRC [EP/J00801X/1, EP/K017829/1]
- National Nature Science Foundation [61171017]
- Engineering and Physical Sciences Research Council [EP/J00801X/1, EP/K017829/1, EP/J00801X/2] Funding Source: researchfish
- EPSRC [EP/K017829/1, EP/J00801X/1, EP/J00801X/2] Funding Source: UKRI
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This work exploits the coexistence of both resistance and capacitance memory effects in TiO2-based two-terminal cells. Our Pt/TiO2/TiOx/Pt devices exhibit an interesting combination of hysteresis and non-zero crossing in their current-voltage (I-V) characteristic that indicates the presence of capacitive states. Our experimental results demonstrate that both resistance and capacitance states can be simultaneously set via either voltage cycling and/or voltage pulses. We argue that these state modulations occur due to bias-induced reduction of the TiOx active layer via the displacement of ionic species.
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