Journal
NANOSCALE RESEARCH LETTERS
Volume 9, Issue -, Pages -Publisher
SPRINGEROPEN
DOI: 10.1186/1556-276X-9-546
Keywords
Graphene synthesis; H-2 flow; CVD; Raman; Mobility
Funding
- National Research Foundation of Korea (NRF) - Ministry of Education [2010-0020207, 2012R1A1A2007211]
- National Research Foundation of Korea [2012R1A1A2007211] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
Ask authors/readers for more resources
Hydrogen flow during low pressure chemical vapor deposition had significant effect not only on the physical properties but also on the electrical properties of graphene. Nucleation and grain growth of graphene increased at higher hydrogen flows. And, more oxygen-related functional groups like amorphous and oxidized carbon that probably contributed to defects or contamination of graphene remained on the graphene surface at low H-2 flow conditions. It is believed that at low hydrogen flow, those remained oxygen or other oxidizing impurities make the graphene films p-doped and result in decreasing the carrier mobility.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available