Journal
NANOSCALE RESEARCH LETTERS
Volume 8, Issue -, Pages -Publisher
SPRINGEROPEN
DOI: 10.1186/1556-276X-8-313
Keywords
Violet luminescence; p-type ZnO; Photoluminescence
Funding
- NSC, Taiwan [NSC 100-2112-M-002-017-MY3]
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A Sb-doped ZnO microrod array was fabricated on an Al-doped ZnO thin film by electrodeposition. Strong violet luminescence, originated from free electron-to-acceptor level transitions, was identified by temperature-dependent photoluminescence measurements. This acceptor-related transition was attributed to substitution of Sb dopants for Zn sites, instead of O sites, to form a complex with two Zn vacancies (V-Zn), the Sb-Zn-2V(Zn) complex. This Sb-Zn-2V(Zn) complex has a lower formation energy and acts as a shallow acceptor which can induce the observed strong violet luminescence. The photoresponsivity of our ZnO p-n homojunction device under a negative bias demonstrated a nearly 40-fold current gain, illustrating that our device is potentially an excellent candidate for photodetector applications in the ultraviolet wavelength region.
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