Journal
NANOSCALE RESEARCH LETTERS
Volume 8, Issue -, Pages -Publisher
SPRINGEROPEN
DOI: 10.1186/1556-276X-8-193
Keywords
Silicon nanowires; Etching rate; Schottky barrier height; Thickness dependent
Funding
- National Natural Science Foundation of China [61106011, 51172109]
- Anhui Province Natural Science Foundation [1308085QF109]
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Large-area, vertically aligned silicon nanowires with a uniform diameter along the height direction were fabricated by combining in situ-formed anodic aluminum oxide template and metal-assisted chemical etching. The etching rate of the Si catalyzed using a thick Au mesh is much faster than that catalyzed using a thin one, which is suggested to be induced by the charge transport process. The thick Au mesh in contact with the Si produces a low Au/Si Schottky barrier height, facilitating the injection of electronic holes from the Au to the Si, thus resulting in a high etching rate.
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