Journal
NANOSCALE RESEARCH LETTERS
Volume 8, Issue -, Pages -Publisher
SPRINGER
DOI: 10.1186/1556-276X-8-285
Keywords
Graphene; Chemical vapor deposition; Plasma; Low temperature
Funding
- National Science Council of the Republic of China, Taiwan [NSC 102-ET-E-008-002-ET]
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Plasma-assisted thermal chemical vapor deposition (CVD) was carried out to synthesize high-quality graphene film at a low temperature of 600A degrees C. Monolayer graphene films were thus synthesized on Cu foil using various ratios of hydrogen and methane in a gaseous mixture. The in situ plasma emission spectrum was measured to elucidate the mechanism of graphene growth in a plasma-assisted thermal CVD system. According to this process, a distance must be maintained between the plasma initial stage and the deposition stage to allow the plasma to diffuse to the substrate. Raman spectra revealed that a higher hydrogen concentration promoted the synthesis of a high-quality graphene film. The results demonstrate that plasma-assisted thermal CVD is a low-cost and effective way to synthesis high-quality graphene films at low temperature for graphene-based applications.
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