Journal
NANOSCALE RESEARCH LETTERS
Volume 8, Issue -, Pages 1-7Publisher
SPRINGEROPEN
DOI: 10.1186/1556-276X-8-80
Keywords
Atomic layer deposition; Pt nanodots; Nonvolatile memory
Funding
- National Key Technologies RD Program [2009ZX02302-002]
- National Natural Science Foundation of China [61076076, 61274088]
- Program for New Century Excellent Talents in University [NCET-08-0127]
- Key Project of the Chinese Ministry of Education [108052]
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Pt nanodots have been grown on Al2O3 film via atomic layer deposition (ALD) using (MeCp)Pt(Me)(3) and O-2 precursors. Influence of the substrate temperature, pulse time of (MeCp)Pt(Me)(3), and deposition cycles on ALD Pt has been studied comprehensively by scanning electron microscopy, transmission electron microscopy, and X-ray photoelectron spectroscopy. Therefore, Pt nanodots with a high density of approximately 2 x 10(12) cm(-2) have been achieved under optimized conditions: 300A degrees C substrate temperature, 1 s pulse time of (MeCp)Pt(Me)(3), and 70 deposition cycles. Further, metal-oxide-semiconductor capacitors with Pt nanodots embedded in ALD Al2O3 dielectric have been fabricated and characterized electrically, indicating noticeable electron trapping capacity, efficient programmable and erasable characteristics, and good charge retention.
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