Journal
NANOSCALE RESEARCH LETTERS
Volume 8, Issue -, Pages -Publisher
SPRINGEROPEN
DOI: 10.1186/1556-276X-8-18
Keywords
Amorphous InGaZnO; Thin-film transistor; Er2O3; Er2TiO5
Funding
- National Science Council (NSC) of Taiwan [NSC-101-2221-E-182-059]
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In this letter, we investigated the structural and electrical characteristics of high-kappa Er2O3 and Er2TiO5 gate dielectrics on the amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT) devices. Compared with the Er2O3 dielectric, the a-IGZO TFT device incorporating an Er2TiO5 gate dielectric exhibited a low threshold voltage of 0.39 V, a high field-effect mobility of 8.8 cm(2)/Vs, a small subthreshold swing of 143 mV/decade, and a high I (on)/I (off) current ratio of 4.23 x 10(7), presumably because of the reduction in the oxygen vacancies and the formation of the smooth surface roughness as a result of the incorporation of Ti into the Er2TiO5 film. Furthermore, the reliability of voltage stress can be improved using an Er2TiO5 gate dielectric.
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