Journal
NANOSCALE RESEARCH LETTERS
Volume 8, Issue -, Pages -Publisher
SPRINGER
DOI: 10.1186/1556-276X-8-396
Keywords
Radial p-n SiNW solar cell; Hydrogenated amorphous silicon; Surface coverage; Open circuit voltage
Funding
- National High Technology Research and Development Program 863 of China [2011AA050511]
- Jiangsu '333' Project
- National Natural Science Foundation of China [51272033]
- Priority Academic Program Development of Jiangsu Higher Education Institutions
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Silicon nanowire (SiNW) arrays for radial p-n junction solar cells offer potential advantages of light trapping effects and quick charge collection. Nevertheless, lower open circuit voltages (V (oc)) lead to lower energy conversion efficiencies. In such cases, the performance of the solar cells depends critically on the quality of the SiNW interfaces. In this study, SiNW core-shell solar cells have been fabricated by growing crystalline silicon (c-Si) nanowires via the metal-assisted chemical etching method and by depositing hydrogenated amorphous silicon (alpha-Si:H) via the plasma-enhanced chemical vapor deposition (PECVD) method. The influence of deposition parameters on the coverage and, consequently, the passivation and photovoltaic properties of alpha-Si:H layers on SiNW solar cells have been analyzed.
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