Journal
NANOSCALE RESEARCH LETTERS
Volume 8, Issue -, Pages -Publisher
SPRINGER
DOI: 10.1186/1556-276X-8-112
Keywords
PLD; ZnO thin films; GaN buffer layer; Crystal structure; Optical properties
Funding
- Shandong Provincial Natural Science Foundation [Y2008A21, ZR2009FZ006, ZR2010EL017]
- Encouragement Foundation for Excellent Middle-aged and Young Scientist of Shandong Province [BS2012CL005]
- Doctor Foundation of University of Jinan [XBS0833]
- Shandong Provincial Science and Technology Project [2009GG20003028]
- Research Foundation of the University of Jinan [XKY1127]
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Zinc oxide thin films have been obtained on bare and GaN buffer layer decorated Si (111) substrates by pulsed laser deposition (PLD), respectively. GaN buffer layer was achieved by a two-step method. The structure, surface morphology, composition, and optical properties of these thin films were investigated by X-ray diffraction, field emission scanning electron microscopy, infrared absorption spectra, and photoluminiscence (PL) spectra, respectively. Scanning electron microscopy images indicate that the flower-like grains were presented on the surface of ZnO thin films grown on GaN/Si (111) substrate, while the ZnO thin films grown on Si (111) substrate show the morphology of inclination column. PL spectrum reveals that the ultraviolet emission efficiency of ZnO thin film on GaN buffer layer is high, and the defect emission of ZnO thin film derived from Zn-i and V-o is low. The results demonstrate that the existence of GaN buffer layer can greatly improve the ZnO thin film on the Si (111) substrate by PLD techniques.
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